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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon 3 COLLECTOR L9013*LT1 3 1 2 1 BASE SOT-23 (TO-236AB) 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current-continuoun Symbol VCEO VCBO VEBO IC Value 20 40 5 500 Symbol PD 225 o Unit V V V mAdc Max Unit mW mW/oC o THERMAL CHARATEERISTICS Characteristic Total Device Dissipation FR-5 Board, (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R JA o o o 1.8 R JA 556 C/W PD 300 2.4 417 -55 to +150 Tj ,Tstg o mW mW/oC C/W o C DEVICE MARKING L9013QLT1=13Q ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol V(BR)CEO V(BR)EBO V(BR)CBO ICBO IEBO Min 20 5 40 Typ Max 150 150 Unit V V V nA nA OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=1.0mA) Emitter-Base Breakdown Voltage (IE=100A) Collector-Base Breakdown Voltage (IC=100A) Collector Cutoff Current (VCB=35V) Emitter Cutoff Current (VEB=4V) L9013*LT1-1/2 LESHAN RADIO COMPANY, LTD. L9013*LT1 ON CHARACTERISTICS DC Current Gain (IC=50mA, VCE=1V) Collector-Emitter Saturation Voltage (IC=500mA,IB=50mA) Hfe VCE(S) 100 600 0.6 V NOTE: * HFE P 100~200 Q 150~300 R 200~400 S 300~600 SOT-23 (TO-236AB) A L 3 NOTES: 1. CONTROLLING DIMENSION: MILLIMETERS BS 1 2 2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH SOLDER PLATING. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 V G C D H K J DIM A B C D G H J K L S V PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm L9013*LT1-2/2 |
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